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Yonghyeon Shin, Sungwoo Weon, Daesik Hong, and Ilgu Yun, "Analytical Model for Junctionless Double-Gate FET in Subthreshold Region", IEEE Trans. on Electron Devices, Apr. 2017
[Other Journals]
조회 29066
Status : | Published |
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Date : | 2017-04 |
Title : | Analytical Model for Junctionless Double-Gate FET in Subthreshold Region |
Authors : | Yonghyeon Shin, Sungwoo Weon, Daesik Hong, and Ilgu Yun |
Journal : | IEEE Transactions on Electron Devices |
Abstract : | An analytical model for junctionless double-gate FETs (JLDGFETs) in the subthreshold region is proposed in this paper. As the analytical models based on Young’s approximation demonstrate certain limitations due to the heavily doped channel of the JLDGFET, it is essential to model the electrical characteristics of a JLDGFET using alternative methods. Therefore, in this paper, by using the Fourier series and Green’s function, the potential distribution (φ( x , y )) in the channel is solved, and the hot-carrier effects and random dopant fluctuation are modeled using localizedtrap chargesand macroscopic analysis. Using the calculated φ( x , y ), I DS and V th are solved analytically with respect to various L and t ox variations, subthreshold swing, the drain-induced barrier lowering, the localized trap charges, and a single impurity dopant. All results from the analytical model are verified through comparisons with commercially available 2-D ATLAS numerical simulation results. |
Download : | https://mirinae.yonsei.ac.kr/?module=fil...le_srl=179 |
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