Spectrum Sensing 6G Full duplex Cognitive Radio OFDM Idle cells FBMC Energy Harvesting Ultra-dense small cell networks Bi-Directional stochastic geometry interference management Asynchronous Transmission SINR mismatch problem HetNet Dynamic TDD NOMA Cross-link interference Spectral efficiency bursty traffic model mode selection Device-to-Device (D2D) OQAM Channel estimation error multi-spectral Ultra-dense small cell Heterogeneous channel estimation capability synchronization Bi-directional full-duplex Preamble Intentional frequency offset (IFO) Asynchronism Shortened TTI Deep learning MLP Vehicle-to-vehicle communication Low Earth orbits (LEO) satellite Railway Simultaneous Sensing and Transmission full-duplex relay Cellular networks Latency selection diversity Cognitive relay networks MIMO K-S statistics Long Term Evolution-Advanced 5G networks interference coordination full-duplex cellular interference mitigation sensing duration Correlated MIMO outage probability transmission capacity (TC) Two-way communications self-interference cancellation in-band full-duplex system automatic repeat request (ARQ) achievable sum rate Coexisting network interference to noise ratio link reliability tabu-search massive connectivity resource size control Coexistence scenarios Resource management spectrum sharing mixed numerology Multiple input multiple output (MIMO) New radio non-terrestrial network (NR-NTN) full-spreading NOMA Intentional time offset LTE-based V2V CP-OFDM Singular Vale Decomposition non-orthogonal multiple access Non-orthogonal multiple access (NOMA) Complexity Cooperative systems Reliability B5G Multiple access Cell-free HST Mobility flexible duplex 5G Asynchronous non-orthogonal multiple access (NOMA) Edge computing Full-duplex Filtered OFDM Vehicle-to-Vehicle C-V2V Grant-free Transmission Sub-band filtering Computation offloading TDD configuration Degree of freedom (DoF) Satellite communication
Status : Published 
Date : 2017-04 
Title : Analytical Model for Junctionless Double-Gate FET in Subthreshold Region 
Authors : Yonghyeon Shin, Sungwoo Weon, Daesik Hong, and Ilgu Yun 
Journal : IEEE Transactions on Electron Devices 
Abstract : An analytical model for junctionless double-gate FETs (JLDGFETs) in the subthreshold region is proposed in this paper. As the analytical models based on Young’s approximation demonstrate certain limitations due to the heavily doped channel of the JLDGFET, it is essential to model the electrical characteristics of a JLDGFET using alternative methods. Therefore, in this paper, by using the Fourier series and Green’s function, the potential distribution (φ( x , y )) in the channel is solved, and the hot-carrier effects and random dopant fluctuation are modeled using localizedtrap chargesand macroscopic analysis. Using the calculated φ( x , y ), I DS and V th are solved analytically with respect to various L and t ox variations, subthreshold swing, the drain-induced barrier lowering, the localized trap charges, and a single impurity dopant. All results from the analytical model are verified through comparisons with commercially available 2-D ATLAS numerical simulation results. 
Download : https://mirinae.yonsei.ac.kr/?module=fil...le_srl=179 

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» [Other Journals] Yonghyeon Shin, Sungwoo Weon, Daesik Hong, and Ilgu Yun, "Analytical Model for Junctionless Double-Gate FET in Subthreshold Region", IEEE Trans. on Electron Devices, Apr. 2017 file Published  2017-04